SPP9527W Datasheet | SYNC POWER

P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP9527W is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching . APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter Features ‹ -40V/-10A,RDS(ON)= 38mΩ@VGS=- 10V ‹ -40V/- 8A,RDS(ON)= 46mΩ@VGS=- 4.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ SOP - 8P package design PIN CONFIGURATION(SOP - 8P) PART MARKING 2011/10/04 Ver.2 Page 1 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number SPP9527WS8RGB Package SOP- 8P Part Marking SPP9527W ※ SPP9527WS8RGB 13” Tape Reel ; Pb - Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate - Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical -40 ±20 -10 -8 -30 -2.3 2.8 1.8 -55/150 -55/150 70 Unit V V A A A W ℃ ℃ ℃/W 2011/10/04 Ver.2 Page 2 P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source...