SDB65N03L Datasheet | SamHop Microelectronics

S DP /B 65N03L S am Hop Microelectronics C orp. S eptember , 2002 N-Channel Logic Level E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S ( m W ) TYP 65A R DS (on) S uper high dense cell design for extremely low R DS (ON). High power and current handling capability. TO-220 & TO-263 package. 8 @ V G S = 10V 12 @ V G S = 4.5V S DP S E R IE S TO-220 S DB S E R IE S TO-263(DD-P AK) ABS OLUTE MAXIMUM R ATINGS (TC =25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed a S ymbol V DS V GS @ TJ=125 C ID IDM IS PD T J , T S TG Limit 30 20 65 195 65 75 0.5 -65 to 175 Unit V V A A A W W/ C C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Derate above 25 C Operating and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient R JC R JA 2 62.5 C /W C /W S DP /B 65N03L E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) g FS C IS S C OS S CRSS b S ymbol Condition V GS = 0V, ID = 250u A V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250u A V GS = 10V, ID = 26A V GS = 4.5V, ID = 21A V DS = 10V, V GS = 10V V DS = 10V, ID = 26A Min Typ C Max Unit 30 10 V u A 100 n A 1 1.5 8 12 65 38 1350 625 190 3 9 V m ohm ON CHAR ACTE R IS TICS...