SP2102 - Dual N-Channel Enhancement Mode Field Effect Transistor

SamHop Microelectronics

Key Features

Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D1 D1 D2 D2 DFN 3x3 PIN1 S1 G1 S2 G2.

SP2102 dual n-channel enhancement mode field effect transistor by SamHop Microelectronics - Datasheet Preview

Datasheet Details

Part number	SP2102
Manufacturer	SamHop Microelectronics
File Size	115.44 KB
Description	Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet	SP2102 Datasheet

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Green Product SP2102 Ver 1.0 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V ID 2.0A R DS(ON) (m Ω) Max 216 @ VGS=10V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D1 D1 D2 D2 DFN 3x3 PIN1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d ae Limit 100 ±20 TA=25°C TA=70°C 2.0 1.6 13 16 TA=25°C TA=70°C 1.47 0.