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SP2107 - Dual N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D2 D2 PIN1 5 6 7 8 4 3 2 1 G2 S2 G1 S1 D1 PDFN 5x6 D1.

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Datasheet Details

Part number SP2107
Manufacturer SamHop Microelectronics
File Size 107.26 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SP2107 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green Product SP2107 Ver 1.0 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V ID 1.2A R DS(ON) ( Ω) Max 0.8 @ VGS=10V 0.93 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D2 D2 PIN1 5 6 7 8 4 3 2 1 G2 S2 G1 S1 D1 PDFN 5x6 D1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 100 ±20 TA=25°C TA=70°C 1.2 1 5 2.25 TA=25°C TA=70°C 2.5 1.