The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Green Product
SP2106
Ver 1.1
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
100V
ID
1A
R DS(ON) ( Ω) Max
2.0 @ VGS=10V 2.4 @ VGS=4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
D2 D2
PIN1
5 6 7 8
4 3 2 1
G2 S2 G1 S1
D1
PDFN 5x6
D1
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a
TA=25°C TA=70°C
Limit 100 ±20 1 0.8 4.1 0.25
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation
a
TA=25°C TA=70°C
2.5 1.
SP2106 Datasheet
