SamHop Microelectronics SP8013
P-Channel Enhancement Mode Field Effect Transistor
| Part No. | SP8013 |
|---|---|
| Datasheet | SP8013 Download |
| Manufacturer |  SamHop Microelectronics |
| Description | P-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. Pin 1 TSON 3.3 x 3.3 D5 D6 D7 D8ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c IDM -Pulsed a c TA=25°C TA=70°C PD Maximum Power Dissipation TA=25°C TA=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 4G 3S 2S 1S Limit -20 ±20 -20 -16 -115 1.67 1.07 -55 to 150 75 Units V V A A A W W °C °C/W Details are subject to change without notice. 1 Jun,13,2014 SP8013 Ver 1.0ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted) Symbol Paramete
