SP823C
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package.
DFN 5x6
PIN1
87 65 12 34
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
Drain Current-Continuous c
TC=25°C TC=70°C
IDM -Pulsed a c
EAS Single Pulse Avalanche Energy d
Maximum Power Dissipation
TC=25°C TC=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
Limit 80 ±20 80 64 163 930 83 53
-55 to 150
Units V V A A A m J W W
°C
°C/W
Details are subject to change without notice.
Aug,27,2015
.samhop..tw
Ver 1.0
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted)
Symbol...
