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SP823CGreen
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
80V 80A 5.5 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package.
DFN 5x6
PIN1
87 65 12 34
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous c
TC=25°C TC=70°C
IDM -Pulsed a c
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C TC=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
Limit 80 ±20 80 64 163 930 83 53
-55 to 150
1.
SP823C Datasheet
