STF2459A - Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet Summary
Features
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G1 S1 S1
P IN 1
D1/D2
G2 S2 S2
Bottom Drain Contact
G1 S1
3 2 1
4 G2 5 6 S2 S2
T DF N 2X5 (Bottom view)
S1.
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Green Product
STF2459A
Ver 1.0
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
6.2 @ VGS=10V 7.5 @ VGS=4.5V 24V 12A 8.0 @ VGS=4.0V 8.6 @ VGS=3.7V 10.3 @ VGS=3.1V 16.3 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
G1 S1 S1
P IN 1
D1/D2
G2 S2 S2
Bottom Drain Contact
G1 S1
3 2 1
4 G2 5 6 S2 S2
T DF N 2X5 (Bottom view)
S1
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
c ac
TA=25°C TA=70°C TA=25°C TA=70°C
Limit 24 ±16 12 9.6 58 1.67 1.
STF2459A Datasheet
