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STF443 - P-Channel Enhancement Mode Field Effect Transistor

Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D P IN 1 D D G G D D S T DF N 2X2 S.

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Datasheet preview – STF443

Datasheet Details

Part number STF443
Manufacturer SamHop Microelectronics
File Size 94.41 KB
Description P-Channel Enhancement Mode Field Effect Transistor
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Green Product STF443 Ver 1.0 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 47 @ VGS=-4.5V 48 @ VGS=-4.0V -20V -4.5A 50 @ VGS=-3.7V 56 @ VGS=-3.1V 64 @ VGS=-2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D P IN 1 D D G G D D S T DF N 2X2 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a d Limit -20 ±10 TA=25°C TA=70°C TA=25°C TA=70°C -4.5 -3.6 -23 a Units V V A A A W W °C Maximum Power Dissipation 1.67 1.
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