STG8203 Datasheet PDF

S T G 8203 J un.06 2005 ver1.2 S amHop Microelectronics C orp. Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m £[ ) Max ID 5A R DS (ON) S uper high dense cell design for low R DS (ON ). 27 @ V G S = 4.0V 42 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. ( 1 ) D1 D2( 8 ) T S S OP 1 2 3 4 8 7 6 5 (T OP V IE W) ( 4 ) G1 ( 2,3 ) S 1 G2 ( 5 ) S 2 ( 6,7 ) ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T C =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 20 10 5 25 2 1.5 -55 to 150 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 85 C /W 1 S T G 8203 E LE CTR ICAL CHAR ACTE R IS TICS (T A = 25 C unless otherwise noted) Parameter OFF CHA...