STG8209 Datasheet PDF

S T G 8209 S amHop Microelectronics C orp. Dec,29.2005 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW ) Max ID 6A R DS (ON) S uper high dense cell design for low R DS (ON ). 26 @ V G S = 4.0V 40 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. E S D P rotected. D1 D2 T S S OP D 1/D 2 S1 S1 G1 1 2 3 4 8 7 6 5 D 1/D 2 S2 S2 G2 G1 G2 (T OP V IE W) S1 S2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous b -P ulsed a S ymbol V DS V GS ID IDM a Limit 20 12 6 24 1.7 1.5 -55 to 150 Unit V V A A A W C Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a IS PD T J , T S TG Operating Junction and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 85 C /W 1 S T G 8209 E LE CTR ICAL CHAR ACTE R IS TICS (T A = 25 C unless otherwise noted) Parameter OFF CHAR ACTE...