STG8206 Datasheet | SamHop Microelectronics

.. S T G 8206 S amHop Microelectronics C orp. Dec,27.2004 ver1.2 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW ) Max 6A R DS (ON) S uper high dense cell design for low R DS (ON ). 20 @ V G S = 4.5V 30 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. D2 S2 S2 G2 T S S OP (T OP V IE W) 1 2 3 4 D1 S1 S1 G1 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage...