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STG8810 - Dual N-Channel Enhancement Mode Field Effect Transistor

Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. ID 7A R DS(ON) (m Ω) Max 20 @ VGS=4.5V 28 @ VGS=2.5V T S S OP D 1/D 2 S1 S1 G1 1 2 3 4 8 7 6 5 D 1/D 2 S2 S2 G2 D1 D2 G1 G2 (T OP V IE W) S1 S2.

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Datasheet Details

Part number STG8810
Manufacturer SamHop Microelectronics
File Size 220.80 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet STG8810 Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com Green Product STG8810 Ver 1.0 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 20V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. ID 7A R DS(ON) (m Ω) Max 20 @ VGS=4.5V 28 @ VGS=2.5V T S S OP D 1/D 2 S1 S1 G1 1 2 3 4 8 7 6 5 D 1/D 2 S2 S2 G2 D1 D2 G1 G2 (T OP V IE W) S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 7 5.6 28 a Units V V A A A W W °C Maximum Power Dissipation 1.
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