Click to expand full text
STM4460
S a mHop Microelectronics C orp.
Ver 1.0
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
40V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
ID
7A
R DS(ON) (m Ω) Max
32 @ VGS=10V 45 @ VGS=4.5V
D D
5 6 7 8
4 3 2 1
G S S S
S O-8 1
D D
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous
b a
TA=25°C TA=70°C
d
Limit 40 ±20 7 5.6 28 9
Units V V A A A mJ W W °C
-Pulsed Single Pulse Avalanche Energy Maximum Power Dissipation
a
TA=25°C TA=70°C
2.5 1.
STM4460 Datasheet
