STM4470 Datasheet PDF

FEATURES

( m Ω ) Max ID 10A RDS(ON) Super high dense cell design for low RDS(ON). 10 @ VGS = 10V 13 @ VGS = 4.5V Rugged and reliable. Surface Mount Package. SO-8 1

ABSOLUTE MAXIMUM RATINGS

(TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a @TJ=25 C b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS d Limit 40 20 10 39 1.7 2.5 -55 to 150 Unit V V A A A W C VGS ID IDM IS PD TJ, TSTG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 1 50 C /W STM4470

ELECTRICAL CHARACTERISTICS

(TA= 25 C unless otherwise noted) Parameter 5 Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS CISS COSS CRSS c Condition VGS =0V, ID = 250uA VDS=32V, VGS = 0V VGS = 20V, VDS =0V VDS = VGS, ID = 250uA VGS= 10V, ID = 10A VGS = 4.5V, ID = 6A VDS = 10V, VGS = 10V VDS = 10V, ID =10A Min Typ C Max Unit 40 1 V uA 100 nA 1 1.7 8 11 20 20 1020 240 135 3 V OFF C...