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STM4470 - N-Channel MOSFET

Key Features

  • ( m Ω ) Max ID 10A RDS(ON) Super high dense cell design for low RDS(ON). 10 @ VGS = 10V 13 @ VGS = 4.5V Rugged and reliable. Surface Mount Package. SO-8 1.

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Datasheet Details

Part number STM4470
Manufacturer SamHop Microelectronics
File Size 138.35 KB
Description N-Channel MOSFET
Datasheet download datasheet STM4470 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green Product STM4470 Oct. 16. 2006 Ver1.1 SamHop Microelectronics Corp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 40V d FEATURES ( m Ω ) Max ID 10A RDS(ON) Super high dense cell design for low RDS(ON). 10 @ VGS = 10V 13 @ VGS = 4.5V Rugged and reliable. Surface Mount Package. SO-8 1 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a @TJ=25 C b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS d Limit 40 20 10 39 1.7 2.