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STM4470E
SamHop Microelectronics Corp.
May. 15 2007 ver1.0
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
40V
F E AT UR E S S uper high dense cell design for low R DS (ON ).
ID
9.5A
RDS(ON) ( m ı Ω ) Max
12 @ VGS = 10V 15 @ VGS = 4.5V
R ugged and reliable. S urface Mount P ackage. E S D P rotected.
SO-8 1
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a @TJ=25 C b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 40 20 9.5 39 1.7 2.
STM4470E Datasheet
