SamHop Microelectronics STM4470E
N-channel Enhancement Mode Field Effect Transistor
| Part No. | STM4470E |
|---|---|
| Datasheet | STM4470E Download |
| Manufacturer |  SamHop Microelectronics |
| Description | N-channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a @TJ=25 C b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 40 20 9.5 39 1.7 2.5 -55 to 150 Unit V V A A A W C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 1 50 C /W STM4470EELECTRICAL CHARACTERISTICS
(TA= 25 C unless otherwise noted) Parameter 5 Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS c Condition VGS =0V, ID = 250uA VDS=32V, VGS = 0V VGS = 20V, VDS =0V VDS = VGS, ID = 250uA VGS= 10V, ID = 10A VGS = 4.5V, ID = 6A VDS = 10V, VGS = 10V VDS = 10V, ID =10A Min Typ C Max Unit 40 1 10 1 1.7 10 12 20 25 1500 220 150 23 22 88 27 28 12.5 3 6 3 V uA uA V OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS b Gate Threshold Voltage Drain-Source On...
