STM4550 Datasheet | SamHop Microelectronics

S T M4550 S am Hop Microelectronics C orp. Apr. 19. 2006 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 55V F E AT UR E S ( m Ω ) Max 5A R DS (ON) S uper high dense cell design for low R DS (ON ). 50 @ V G S = 10V 70 @ V G S = 4.5V R ugged and reliable. S urface Mount P ackage. S O-8 1 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ T J =25 C a -P ulsed Drain-S ource Diode Forward C urrent b Maximum P ower Dissipation b Operating Junction and S torage Temperature R ange S ymbol Vspike V DS V GS ID IDM IS PD T J , T S TG d Limit 60 55 20 5 20 1.7 2.5 -55 to 150 Unit V V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA C /W S T M4550 E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) g FS C IS S C OS S CRSS b Condition V GS = 0V, ID = 250u A V DS = 44V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250u A V GS =10V, ID = 5A V GS =4.5V, ID= 3A V DS = 10V, V GS = 10V V DS = 10V, ID = 5A Min Typ C Max...