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STM4806Green
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
7.5 @ VGS=10V 30V 15A
9.9 @ VGS=4.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable.
Suface Mount Package.
S O-8
1
D5 D6 D7 D8
4G 3S 2S 1S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage ID Drain Current-Continuous a
TA=25°C TA=70°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TA=25°C TA=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit 30 ±20 15 12 75 86 2.5 1.
STM4806 Datasheet
