SamHop Microelectronics STM4806
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. S O-8 1 D5 D6 D7 D8 4G 3S 2S 1SABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a TA=25°C TA=70°C IDM -Pulsed b EAS Single Pulse Avalanche Energy d PD Maximum Power Dissipation a TA=25°C TA=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a Limit 30 ±20 15 12 75 86 2.5 1.6 -55 to 150 50 Units V V A A A mJ W W °C °C/W Details are subject to change without notice. 1 Dec,17,2012 STM4806 Ver 1.0ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise not