SamHop Microelectronics STM6914
Dual N-Channel Enhancement Mode Field Effect Transistor
| Part No. | STM6914 |
|---|---|
| Datasheet | STM6914 Download |
| Manufacturer |  SamHop Microelectronics |
| Description | Dual N-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D2 D2 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S O-8 1 D1 D1ABSOLUTE MAXIMUM RATINGS
( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 30 ±20 TA=25°C TA=70°C TA=25°C TA=70°C 6.5 5.2 24 a Units V V A A A W W °C Maximum Power Dissipation 2 1.28 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 62.5 °C/W Details are subject to change without notice. Sep,23,2014 1 STM6914 Ver 1.1ELECTRICAL CHARACTERISTICS
( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=24V , VGS=0V Min 30 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS D...
