STM6916 Datasheet PDF

FEATURES

Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D2 D2 D1 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S O-8 1 D1

ABSOLUTE MAXIMUM RATINGS

( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 30 ±20 TA=25°C TA=70°C 10 8 36 48 TA=25°C TA=70°C 2 1.28 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 62.5 °C/W Details are subject to change without notice. Oct,30,2012 1 STM6916 Ver 1.0

ELECTRICAL CHARACTERISTICS

( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=24V , VGS=0V 30 1 ±100 V uA nA VGS= ±20V ,...