STM6915 Datasheet PDF

S T M6915 S amHop Microelectronics C orp. Dec, 12 2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S S uper high dense cell design for low R DS (ON ). ID 8.5A R DS (ON) ( m ı ) Max 19 @ V G S = 10V 28 @ V G S = 4.5V R ugged and reliable. S urface Mount P ackage. D1 8 D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage G ate-S ource Voltage Drain C urrent-C ontinuous @ T a -P ulsed b a S ymbol V DS VGS 25 C 70 C IDM IS PD ID N-Channel 30 20 8.5 6.5 40 1.7 2 1.44 Unit V V A A A A W C Drain-S ource Diode F orward C urrent a Maximum P ower Dissipation a Operating J unction and S torage Temperature R ange T a= 25 C T a=70 C TJ, TS TG -55 to -150 THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 62.5 C /W 1 S T M6915 E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS...