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STS126 - N-Channel MOSFET

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. ID 1.4A R DS(ON) (m Ω) Max 312 @ VGS=10V S OT-23 D S G D G S.

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Datasheet Details

Part number STS126
Manufacturer SamHop Microelectronics
File Size 90.64 KB
Description N-Channel MOSFET
Datasheet download datasheet STS126 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Gre r Pro STS126 Ver 2.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. ID 1.4A R DS(ON) (m Ω) Max 312 @ VGS=10V S OT-23 D S G D G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 100 ±20 TA=25°C TA=70°C TA=25°C TA=70°C 1.4 1.1 5.3 a Units V V A A A W W °C Maximum Power Dissipation 1.25 0.