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STS126 Datasheet PDF

SamHop Microelectronics STS126

N-Channel MOSFET

Part No. STS126
Datasheet STS126 Download
Manufacturer
SamHop Microelectronics
Description N-Channel MOSFET
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STS126 datasheet page 1 preview

FEATURES

Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. ID 1.4A R DS(ON) (m Ω) Max 312 @ VGS=10V S OT-23 D S G D G S

ABSOLUTE MAXIMUM RATINGS

( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 100 ±20 TA=25°C TA=70°C TA=25°C TA=70°C 1.4 1.1 5.3 a Units V V A A A W W °C Maximum Power Dissipation 1.25 0.8 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 100 °C/W Details are subject to change without notice. May,31,2012 1 STS126 Ver 2.0

ELECTRICAL CHARACTERISTICS

( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=80V , VGS=0V Min 100 Typ Max Units V OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current 1 ±100 uA nA VGS= ±20V , VDS=0V ON CHARACTERIS...
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