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S amHop Microelectronics C orp.
S T S 2309
Nov 22, 2004
P -C hannel E nhancement Mode Field E ffect Trans is tor
P R ODUC T S UMMAR Y
V DS S
-20V
F E AT UR E S
( m W ) Max
ID
-2.3A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
130 @ V G S = -4.5V 190@ V G S = -2.5V
R ugged and reliable. S OT-23 package.
D
S OT-23
D S G
G
S
AB S OL UTE MAXIMUM R ATINGS (T A =25 C unles s otherwis e noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuousa @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit -20 10 -2.3 -8 -1.25 1.
STS2309 Datasheet
