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STS2321 - P-Channel Enhancement Mode Field Effect Transistor

Key Features

  • ( m W ) Max ID -3.2A RDS(ON) Super high dense cell design for low RDS(ON). 65 @ VGS = -4.5V 90 @ VGS =-2.5V Rugged and reliable. SOT-23 package. D SOT-23 D S G G S.

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Datasheet Details

Part number STS2321
Manufacturer SamHop Microelectronics
File Size 555.13 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet STS2321 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SamHop Microelectronics Corp. STS2321 Oct .29 2004 V1.1 P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS -20V FEATURES ( m W ) Max ID -3.2A RDS(ON) Super high dense cell design for low RDS(ON). 65 @ VGS = -4.5V 90 @ VGS =-2.5V Rugged and reliable. SOT-23 package. D SOT-23 D S G G S ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a @TJ=25 C b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit -20 10 -3.2 -11 -1.25 1.