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STS3405 - P-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. SOT-23 package. D S OT-23 D S G G S.

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Datasheet Details

Part number STS3405
Manufacturer SamHop Microelectronics
File Size 107.36 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet STS3405 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green Product STS3405 Ver 1.1 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -30V ID -3A R DS(ON) (m Ω) Max 100 @ VGS=-10V 150 @ VGS=-4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. SOT-23 package. D S OT-23 D S G G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C ID Drain Current-Continuous a TA=70°C b IDM -Pulsed PD TJ, TSTG Maximum Power Dissipation a Limit -30 ±20 -3 -2.4 -12 1.25 0.