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Gr Pr
STS3415
Ver 2.0
S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
46 @ VGS=-4.5V 47 @ VGS=-4.0V -20V -4.2A 49 @ VGS=-3.7V 54 @ VGS=-3.1V 61 @ VGS=-2.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
D
S OT -23
D S G S G
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a
Limit -20 ±10 TA=25°C TA=70°C TA=25°C TA=70°C -4.2 -3.4 -16
a
Units V V A A A W W °C
Maximum Power Dissipation
1.25 0.
STS3415 Datasheet
