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Gr Pr
STS3417
Ver 1.0
S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
96 @ VGS=-4.5V -30V -3A 100 @ VGS=-4.0V 103 @ VGS=-3.7V 111 @ VGS=-3.1V 123 @ VGS=-2.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
D
S OT -23
D S G S G
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a a
Limit -30 ±12 TA=25°C TA=25°C -3 -11 1.
STS3417 Datasheet
