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Green Product
STS3420
Ver 1.1
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
33 @ VGS= 10V 30V 4.5A 40 @ VGS= 4.5V 53 @ VGS= 2.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
D
S OT 23
D S G
G
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a
Limit 30 ±12 TC=25°C TC=70°C TC=25°C TC=70°C 4.5 3.6 18
a
Units V V A A A W W °C
Maximum Power Dissipation
1.25 0.
STS3420 Datasheet
