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STS6308 - N-Channel MOSFET

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 3A R DS(ON) (m Ω) Max 83 @ VGS= 10V 107 @ VGS= 4.5V D S OT 23 D S G G S.

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Datasheet Details

Part number STS6308
Manufacturer SamHop Microelectronics
File Size 172.44 KB
Description N-Channel MOSFET
Datasheet download datasheet STS6308 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green Product STS6308 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 3A R DS(ON) (m Ω) Max 83 @ VGS= 10V 107 @ VGS= 4.5V D S OT 23 D S G G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 60 ±20 TC=25°C TC=70°C 3 2.4 11.4 23 TC=25°C TC=70°C 1.25 0.