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Gr Pr
STS6N20
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
60V
ID
0.8A
R DS(ON) ( Ω) Max
1.05 @ VGS=10V 1.30 @ VGS=4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package.
D
S OT 23
D S G S G
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a
Limit 60 ±20 TA=25°C TA=70°C TA=25°C TA=70°C 0.8 0.64 3
a
Units V V A A A W W °C
Maximum Power Dissipation
1.25 0.
STS6N20 Datasheet
