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STT600 - N-Channel MOSFET

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. D D G G D S S STT SERIES SO T - 223.

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Datasheet Details

Part number STT600
Manufacturer SamHop Microelectronics
File Size 129.00 KB
Description N-Channel MOSFET
Datasheet download datasheet STT600 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green Product STT600 Ver 3.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 90V ID 1.4A R DS(ON) (m Ω) Max 600 @ VGS=10V 708 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. D D G G D S S STT SERIES SO T - 223 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d ae Limit 90 ±20 TA=25°C TA=70°C 1.4 1.12 9.3 0.49 TA=25°C TA=70°C 3 1.