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Green Product
STF445
Ver 1.0
S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
29 @ VGS=-4.5V 30 @ VGS=-4.0V -20V -5.6A 32 @ VGS=-3.7V 36 @ VGS=-3.1V 43 @ VGS=-2.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
D P IN 1 D D G G
D D S
T DF N 2X2
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a d
Limit -20 ±10 TA=25°C TA=70°C TA=25°C TA=70°C -5.6 -4.5 -28
a
Units V V A A A W W °C
Maximum Power Dissipation
1.67 1.
STF445 Datasheet
