SamHop STF620S
N-Channel Enhancement Mode Field Effect Transistor
| Part No. | STF620S |
|---|---|
| Datasheet | STF620S Download |
| Manufacturer |  SamHop |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220F Package. ID 12A R DS(ON) (m Ω) Max 75 @ VGS=10V 105 @ VGS=4.5V D G D S G STF SERIES TO-220F SABSOLUTE MAXIMUM RATINGS
( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Avalanche Energy d b a Limit 60 ±20 T C =25 °C T C =70 °C 12 9.6 36 30 a Units V V A A A mJ W W °C Maximum Power Dissipation TC=25°C TC=70°C 21 13.3 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case a R JA Thermal Resistance, Junction-to-Ambient a 6 65 °C/W °C/W Details are subject to change without notice. Nov,18,2009 1 STF620S Ver 1.0ELECTRICAL CHARACTERISTICS
( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units V 1 ±100 uA nA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Curren...
