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S T F 8220
S amHop Microelectronics C orp. Oct.23 2006 ver1.1
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
( mW ) Max
ID
7A
R DS (ON)
20 28
S uper high dense cell design for low R DS (ON ).
@ V G S = 4.0V @ V G S = 2.5V
S2 S2 S2 G2
R ugged and reliable. S urface Mount P ackage. E S D P rotected.
Bottom Drain Contact
S1 S1 S1
4
Q1
5 6 7
Q2 Bottom Drain Contact
S2 S2 S2 G2
P IN 1
S1 S1 S1 G1
D1/D2
3 2 1
DF N 2X3 (B ottom view)
G1
8
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ T J =25 C -P ulsed
b
S ymbol V DS V GS ID IDM IS PD T J , T S TG
Limit 20 12 7 30 1.7 1.
STF8220 Datasheet
