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S T M8358S
S amHop Microelectronics C orp.
Oct.28, 2005
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
P R ODUC T S UMMAR Y (N-C hannel)
V DS S
30V
P R ODUC T S UMMAR Y (P -C hannel)
V DS S
-30V
ID
7.2A
R DS (ON) ( m W )
Max
ID
-5.2A
R DS (ON) ( m W )
Max
25 @ V G S = 10V 36 @ V G S = 4.5V
D1
8
48 @ V G S = -10V 72 @ V G S = -4.5V
D1
7
D2
6
D2
5
S O-8 1
1 2 3 4
S1
G1 S 2
G2
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed
a
S ymbol V DS V GS 25 C 70 C ID IDM IS Ta= 25 C Ta=70 C PD T J , T S TG
N-C hannel P-C hannel 30 20 7.2 6.1 29 1.7 2 1.44 -55 to 150 -30 20 -5.2 -4.4 -20 -1.
STM8358S Datasheet
