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STP35N10 - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 package. D G D S G S TP S E R IE S TO-220 S.

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Datasheet Details

Part number STP35N10
Manufacturer SamHop
File Size 130.15 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet STP35N10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green Product STP35N10 Ver 1.1 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V ID 35A R DS(ON) (m Ω) Typ 30 @ VGS=10V FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 package. D G D S G S TP S E R IE S TO-220 S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a a Limit 100 ±20 T C =25 °C T C =70 °C TC=25°C TC=70°C 35 29.3 103 75 52.