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STP60L60F - N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220F Package. D G D S G STF SERIES TO-220F S.

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Datasheet Details

Part number STP60L60F
Manufacturer SamHop
File Size 114.33 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet STP60L60F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Gr Pr STP60L60F Ver 1.0 SamHop Microelectronics Corp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V ID 32A R DS(ON) (m Ω) Typ 15 @ VGS=10V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220F Package. D G D S G STF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Avalanche Energy d b a Limit 60 ±20 T C =25 °C T C =70 °C 32 26.