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STP656F - N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220F Package. ID 22A R DS(ON) (m ) Max 19 @ VGS=10V 29 @ VGS=4.5V D G D S G STF SERIES TO-220F S.

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Datasheet Details

Part number STP656F
Manufacturer SamHop
File Size 117.84 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet STP656F Datasheet

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Full PDF Text Transcription (Reference)

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Gr Pr STP656F Ver 1.0 SamHop Microelectronics Corp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220F Package. ID 22A R DS(ON) (m ) Max 19 @ VGS=10V 29 @ VGS=4.5V D G D S G STF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Avalanche Energy d Maximum Power Dissipation a b a Limit 60 ±20 T C =25 °C T C =70 °C 22 17.7 66 182 TC=25°C TC=70°C 21 13.