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K9LAG08U0M Datasheet Flash Memory

Manufacturer: Samsung Electronics

Overview: .. K9HBG08U1M K9LAG08U0M K9MCG08U5M Advance FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Voltage Supply : 2.7 V ~ 3.6 V.
  • Organization - Memory Cell Array : (2G + 64M)bit x 8bit - Data Register : (2K + 64)bit x8bit.
  • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte.
  • Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 60µs(Max. ) - Serial Access : 30ns(Min. ).
  • K9MCG08U5M : 50ns(Min. ).
  • Memory Cell : 2bit / Memory Cell.
  • Fast Write Cycle Time - Program time : 800µs(Typ. ) - Block.

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