K9LAG08U0M - Flash Memory

This page provides the datasheet information for the K9LAG08U0M, a member of the K9LAG-08U Flash Memory family.

Product Overview

Samsung Electronics

Part number	K9LAG08U0M
Manufacturer	Samsung Electronics
File Size	1.11 MB
Description	Flash Memory
Datasheet	K9LAG08U0M Datasheet
Additional preview pages of the K9LAG08U0M datasheet.

Offered in 2Gx8bit, the K9LAG08U0M is a 16G-bit NAND Flash Memory with spare 512M-bit.

Its NAND cell provides the most costeffective solution for the solid state mass storage market.

Voltage Supply : 2.7 V ~ 3.6 V.
Organization - Memory Cell Array : (2G + 64M)bit x 8bit - Data Register : (2K + 64)bit x8bit.
Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte.
Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 60µs(Max. ) - Serial Access : 30ns(Min. ).
K9MCG08U5M : 50ns(Min. ).
Memory Cell : 2bit / Memory Cell.
Fast Write Cycle Time - Program time : 800µs(Typ. ) - Block.

K9LAG08U1A - FLASH MEMORY (Samsung)
K9L8G08U1A - Flash Memory (Samsung)
K9LBG08U0D - 4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory (Samsung semiconductor)
K9LBG08U0E - 16Gb E-die NAND Flash (Samsung)
K9LBG08U1D - FLASH MEMORY (Samsung)
K9LBG08U1M - FLASH MEMORY (Samsung)
K9LCG08U0B - 32Gb B-die NAND Flash (Samsung)
K9LCG08U1A - 32Gb A-die NAND Flash (Samsung)
K9LCGD8S1M-B - FLASH MEMORY (Samsung)
K9LCGD8U1M-B - FLASH MEMORY (Samsung)

Other Datasheets by Samsung Electronics

Published: Oct 9, 2007 |