Samsung Semiconductor K4S280832I
The K4S280432I / K4S280832I / K4S281632I is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.| Part No. | K4S280832I |
|---|---|
| Datasheet | K4S280832I Download |
| Manufacturer |  Samsung Semiconductor |
| Description | JEDEC standard 3.3V power supply LVTTL compatible |
| Buy | Stock & Price |
FEATURES
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● JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
● All inputs are sampled at the positive going edge of the system clock.
● Burst read single-bit write operation
● DQM (x4,x8) & L(U)DQM (x16) for masking
● Auto & self refresh
● 64ms refresh period (4K Cycle)
● RoHS compliant for Pb-free Package
GENERAL DESCRIPTION
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Ordering Information Part No. K4S280432I-T(U)C/L75 K4S280832I-T(U)C/L75 K4S281632I-T(U)C/L50 K4S281632I-T(U)C/L60 K4S281632I-T(U)C/L75 Orgainization 32Mb x 4 16Mb x 8 8Mb x 16 8Mb x 16 8Mb x 16 Max Freq.
