K6T2008S2M Datasheet

Manufacturer: Samsung Semiconductor

Datasheet Details

Part number	K6T2008S2M
Datasheet	K6T2008S2M_SamsungSemiconductor.pdf
File Size	166.68 KB
Manufacturer	Samsung Semiconductor
Description	256K X 8 Bit Low Power And Low Voltage CMOS Static RAM

K6T2008S2M Overview

The K6T2008S2M families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and various package type for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.

K6T2008S2M Key Features

Process Technology: TFT
Organization: 256Kx8
Power Supply Voltage K6T2008S2M Family: 2.3~2.7V
Low Data Retention Voltage: 2V(Min)
Three state output and TTL patible
Package Type: 32-TSOP1-0820F, 32-TSOP1-0813.4F
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Part Number	Description
K6T2008S2A	256K X 8 Bit Low Power And Low Voltage CMOS Static RAM
K6T2008U2A	256Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T2008V2A	256Kx8 bit Low Power and Low Voltage CMOS Static RAM
K6T0808C1D	CMOS SRAM
K6T0808U1D	CMOS SRAM
K6T0808V1D	CMOS SRAM
K6T1008C2C	CMOS SRAM
K6T1008C2E	CMOS SRAM
K6T1008U2C	128K x8 bit Low Power and Low Voltage CMOS Static RAM
K6T1008V2C	128K x8 bit Low Power and Low Voltage CMOS Static RAM

Datasheet Details

K6T2008S2M Overview

K6T2008S2M Key Features

More Datasheets from Samsung Semiconductor

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