K6T2008S2M Key Features
- Process Technology: TFT
- Organization: 256Kx8
- Power Supply Voltage K6T2008S2M Family: 2.3~2.7V
- Low Data Retention Voltage: 2V(Min)
- Three state output and TTL patible
- Package Type: 32-TSOP1-0820F, 32-TSOP1-0813.4F
- Forward
- Part: K6T2008S2M
- Manufacturer: Samsung Semiconductor
- Size: 166.68 KB
Related Samsung Semiconductor Datasheets
| Part Number | Description |
|---|---|
| K6T2008S2A | 256K X 8 Bit Low Power And Low Voltage CMOS Static RAM |
| K6T2008U2A | 256Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6T2008V2A | 256Kx8 bit Low Power and Low Voltage CMOS Static RAM |
| K6T0808C1D | CMOS SRAM |
| K6T0808U1D | CMOS SRAM |
K6T2008S2M Description
The K6T2008S2M families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and various package type for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.