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K6T2008S2M - 256K X 8 Bit Low Power And Low Voltage CMOS Static RAM

General Description

The K6T2008S2M families are fabricated by SAMSUNG′s advanced CMOS process technology.

The families support various operating temperature ranges and various package type for user flexibility of system design.

Key Features

  • Process Technology: TFT.
  • Organization: 256Kx8.
  • Power Supply Voltage K6T2008S2M Family: 2.3~2.7V.
  • Low Data Retention Voltage: 2V(Min).
  • Three state output and TTL Compatible.
  • Package Type: 32-TSOP1-0820F, 32-TSOP1-0813.4F CMOS SRAM.

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Full PDF Text Transcription for K6T2008S2M (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K6T2008S2M. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com K6T2008S2M Family Document Title 256Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Initial ...

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c RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Initial draft Finalize Draft Date Remark September 30, 1997 Preliminary August 27, 1998 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. Revision 1.0 August 1998 www.DataSheet4U.com K6T2008S2M Family FEATURES • Process Technology: TFT • Organization: 256Kx8 • Power Supply Voltage K6T2008S2M Family: 2.3~2.

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