KM641001B Datasheet | Samsung Semiconductor

DESCRIPTION The KM641001B is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The KM641001B/BL uses 4 mon input and output lines and has at output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The KM641001B/BL is packaged in a 400 mil 28-pin plastic SOJ. KM641001B/BL 256K x 4 Bit (with OE)High-Speed CMOS Static RAM FEATURES - Fast Access Time 15, 20ns(Max.) - Low Power Dissipation Standby (TTL) : 20m A(Max.) (CMOS) : 5m A(Max.) 1m A(Max) L-Ver. Only Operating KM641001B/BL - 15 : 120m A(Max.) KM641001B/BL - 20 : 118m A(Max.) - Single 5.0V±10% Power Supply - TTL patible Inputs and Outputs - Fully Static Operation - No Clock or Refresh required - Three State Outputs - 2V Minimum Data Retention ; L-Ver. only - Standard Pin Configuration KM641001B/BLJ : 28-SOJ-400A FUNCTIONAL BLOCK DIAGRAM Clk Gen. A0 A1 A2 A3 A4 A5 A6 A7 A8 PIN CONFIGURATION(Top View) A0 A1 A2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 Vcc 27 A17 26 A16 25 A15 24 A14 23 A13 Pre-Charge Circuit Row Select A3 Memory Array 512 Rows 512x4 Columns A4 A5 A6 A7 A8 22 A12 21 A11 20 N.C 19 I/O4 18 I/O3 17 I/O2 16 I/O1 15 WE I/O1~I/O4 Data Cont. CLK Gen. I/O Circuit & Column Select A9 A10 CS OE Vss A9 A10 A11 A12 A13 A14 A15 A16 A17 CS WE OE PIN FUNCTION Pin Name A0 - A17 WE CS OE I/O1 ~ I/O 4 VCC VSS N.C Pin Function Address Inputs Write Enable Chip Select Output Enable Data Inputs/Outputs Power(+5.0V) Ground No Connection -2- Rev. 3.0 July...