KM641001B - CMOS SRAM

Product Overview

Samsung Semiconductor

Part number	KM641001B
Manufacturer	Samsung Semiconductor
File Size	124.80 KB
Description	CMOS SRAM
Datasheet	KM641001B Datasheet
Additional preview pages of the KM641001B datasheet.

The KM641001B is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits.

The KM641001B/BL uses 4 common input and output lines and has at output enable pin which operates faster than address access time at read cycle.

Fast Access Time 15, 20ns(Max. ).
Low Power Dissipation Standby (TTL) : 20mA(Max. ) (CMOS) : 5mA(Max. ) 1mA(Max) L-Ver. Only Operating KM641001B/BL - 15 : 120mA(Max. ) KM641001B/BL - 20 : 118mA(Max. ).
Single 5.0V±10% Power Supply.
TTL Compatible Inputs and Outputs.
Fully Static Operation - No Clock or Refresh required.
Three State Outputs.
2V Minimum Data Retention ; L-Ver. only.
Standard Pin Configuration KM641001B/BLJ : 28-SO.

KM644002 - 1M X 4 Bit (with Oe) high-speed CMOS Static RAM (Samsung)
KM644002L - 1M X 4 Bit (with Oe) high-speed CMOS Static RAM (Samsung)
KM6161000B - 64K X 16-Bit Low Power CMOS Static RAM (Samsung Electronics)
KM6161002A - CMOS SRAM (Samsung)
KM6161002B - CMOS SRAM (Samsung)
KM6161002C - CMOS SRAM (Samsung)
KM616FR1000 - 64K x 16-bit Super Low Power and Low Voltage Full CMOS Static RAM (Samsung)
KM616FS1000 - 64K x 16-bit Super Low Power and Low Voltage Full CMOS Static RAM (Samsung)
KM616FV1000 - 64K x 16-bit Super Low Power and Low Voltage Full CMOS Static RAM (Samsung)
KM62256A - 32K X 8-Bit Static RAM (Samsung Electronics)

Other Datasheets by Samsung Semiconductor

Published: Feb 6, 2007 |