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KM641003B Datasheet

CMOS Sram

Manufacturer: Samsung Semiconductor

KM641003B Overview

The KM641003B is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The KM641003B uses 4 mon input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG ′s advanced CMOS process and designed for high-speed circuit technology.

KM641003B Key Features

  • Fast Access Time 8,10,12ns(Max.)
  • Low Power Dissipation Standby (TTL) : 50 mA(Max.) (CMOS) : 10 mA(Max.) Operating KM641003B
  • 8 : 150 mA(Max.) KM641003B
  • 10 : 145 mA(Max.) KM641003B
  • 12 : 140 mA(Max.)
  • Single 5.0V ±10% Power Supply
  • TTL patible Inputs and Outputs
  • I/O patible with 3.3V Device
  • Fully Static Operation
  • No Clock or Refresh required

More Datasheets from Samsung Semiconductor

See all Samsung Semiconductor datasheets

Part Number Description
KM641003A CMOS SRAM
KM641003C CMOS SRAM
KM641001A CMOS SRAM
KM641001B CMOS SRAM
KM641001BL CMOS SRAM
KM644002A 1M X 4 Bit (with Oe)high-speed CMOS Static RAM
KM644002B 1M X 4 Bit (with Oe)high Speed CMOS Static RAM
KM644002C 1M X 4 Bit (with Oe)high Speed CMOS Static RAM
KM6164000B 256Kx16 bit Low Power CMOS Static RAM
KM6164002 CMOS SRAM

KM641003B Distributor