Datasheet Details
| Part number | KM736V687 |
|---|---|
| Manufacturer | Samsung Semiconductor |
| File Size | 457.78 KB |
| Description | 64Kx36-Bit Synchronous Burst SRAM |
| Datasheet |
 KM736V687 Datasheet
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General Description
The KM736V687 is 2,359,296 bits Synchronous Static Random Access Memory designed to support zero wait state performance for advanced Pentium/Power PC based system.
And with CS1 high, ADSP is blocked to control signals.
It can be organized as 64K words of 36 bits.
Key Features
- Synchronous Operation. On-Chip Address Counter. Write Self-Timed Cycle. On-Chip Address and Control Registers. Single 3.3V ±5% Power Supply. 5V Tolerant Inputs except I/O Pins. Byte Writable Function. Global Write Enable Controls a full bus-width write. Power Down State via ZZ Signal. Asynchronous Output Enable Control. ADSP, ADSC, ADV Burst Control Pins. LBO Pin allows a choice of either a interleaved burst or a linear burst.
- Three Chip Enables for simple depth expansion with No Data.