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KM736V687 - 64Kx36-Bit Synchronous Burst SRAM

Datasheet Summary

Description

The KM736V687 is 2,359,296 bits Synchronous Static Random Access Memory designed to support zero wait state performance for advanced Pentium/Power PC based system.

And with CS1 high, ADSP is blocked to control signals.

It can be organized as 64K words of 36 bits.

Features

  • Synchronous Operation. On-Chip Address Counter. Write Self-Timed Cycle. On-Chip Address and Control Registers. Single 3.3V ±5% Power Supply. 5V Tolerant Inputs except I/O Pins. Byte Writable Function. Global Write Enable Controls a full bus-width write. Power Down State via ZZ Signal. Asynchronous Output Enable Control. ADSP, ADSC, ADV Burst Control Pins. LBO Pin allows a choice of either a interleaved burst or a linear burst.
  • Three Chip Enables for simple depth expansion with No Data.

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Datasheet preview – KM736V687

Datasheet Details

Part number KM736V687
Manufacturer Samsung Semiconductor
File Size 457.78 KB
Description 64Kx36-Bit Synchronous Burst SRAM
Datasheet download datasheet KM736V687 Datasheet
Additional preview pages of the KM736V687 datasheet.

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Full PDF Text Transcription

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PRELIMINARY KM736V687 Document Title 64Kx36-Bit Synchronous Burst SRAM, 3.3V Power Datasheets for 100TQFP 64Kx36 Synchronous SRAM Revision History Rev. No. Rev. 0.0 Rev. 1.0 History Initial draft Final spec release Draft Date Nov. 02. 1996 May. 27. 1997 Remark Preliminary Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- May 1997 Rev 1.0 PRELIMINARY KM736V687 64Kx36-Bit Synchronous Burst SRAM FEATURES Synchronous Operation. On-Chip Address Counter.
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