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KM736V687A Datasheet

Manufacturer: Samsung Semiconductor
KM736V687A datasheet preview

Datasheet Details

Part number KM736V687A
Datasheet KM736V687A_SamsungSemiconductor.pdf
File Size 469.08 KB
Manufacturer Samsung Semiconductor
Description 64Kx36-Bit Synchronous Burst SRAM
KM736V687A page 2 KM736V687A page 3

KM736V687A Overview

The KM736V687A is 2,359,296 bits Synchronous Static Random Access Memory designed to support zero wait state performance for advanced Pentium/Power PC based system. And with CS1 high, ADSP is blocked to control signals. It can be organized as 64K words of 36 bits.

KM736V687A Key Features

  • Synchronous Operation
  • On-Chip Address Counter
  • Write Self-Timed Cycle
  • On-Chip Address and Control Registers
  • VDD= 3.3V+0.3V/-0.165V Power Supply
  • 5V Tolerant Inputs except I/O Pins
  • Byte Writable Function
  • Global Write Enable Controls a full bus-width write
  • Power Down State via ZZ Signal
  • Asynchronous Output Enable Control
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KM736V687 64Kx36-Bit Synchronous Burst SRAM
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KM736V747 128Kx36 & 256Kx18 Flow-Through NtRAM
KM736V749 128Kx36 & 256Kx18 Pipelined NtRAM
KM736V787 128Kx36 Synchronous SRAM
KM736V789 128Kx36 Synchronous SRAM
KM736V790 128Kx36 Synchronous SRAM
KM736V795 128Kx36 Synchronous SRAM
KM736V799 128Kx36 Synchronous SRAM

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