• Part: KM736V790
  • Description: 128Kx36 Synchronous SRAM
  • Manufacturer: Samsung Semiconductor
  • Size: 297.54 KB
Download KM736V790 Datasheet PDF
Samsung Semiconductor
KM736V790
FEATURES - Synchronous Operation. - 2 Stage Pipelined operation with 4 Burst. - On-Chip Address Counter. - Self-Timed Write Cycle. - On-Chip Address and Control Registers. - VDD= 3.3V+0.3V/-0.165V Power Supply. - VDDQ Supply Voltage 3.3V+0.3V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O - 5V Tolerant Inputs Except I/O Pins. - Byte Writable Function. - Global Write Enable Controls a full bus-width write. - Power Down State via ZZ Signal. - LBO Pin allows a choice of either a interleaved burst or a linear burst. - Three Chip Enables for simple depth expansion with No Data Contention ; 2cycle Enable, 2cycle Disable. - Asynchronous Output Enable Control. - ADSP, ADSC, ADV Burst Control Pins. - TTL-Level Three-State Output. - 100-TQFP-1420A GENERAL DESCRIPTION The KM736V790 is a 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 128K words of 36bits and integrates address...