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KM736V790 Datasheet

Manufacturer: Samsung Semiconductor
KM736V790 datasheet preview

Datasheet Details

Part number KM736V790
Datasheet KM736V790_SamsungSemiconductor.pdf
File Size 297.54 KB
Manufacturer Samsung Semiconductor
Description 128Kx36 Synchronous SRAM
KM736V790 page 2 KM736V790 page 3

KM736V790 Overview

The KM736V790 is a 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 128K words of 36bits and integrates address and control registers, a 2-bit burst address counter and added some new functions for high performance cache RAM applications; Write cycles are internally self-timed and synchronous.

KM736V790 Key Features

  • Synchronous Operation
  • 2 Stage Pipelined operation with 4 Burst
  • On-Chip Address Counter
  • Self-Timed Write Cycle
  • On-Chip Address and Control Registers
  • VDD= 3.3V+0.3V/-0.165V Power Supply
  • 5V Tolerant Inputs Except I/O Pins
  • Byte Writable Function
  • Global Write Enable Controls a full bus-width write
  • Power Down State via ZZ Signal
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KM736V749 128Kx36 & 256Kx18 Pipelined NtRAM
KM736V787 128Kx36 Synchronous SRAM
KM736V789 128Kx36 Synchronous SRAM
KM736V687 64Kx36-Bit Synchronous Burst SRAM
KM736V687A 64Kx36-Bit Synchronous Burst SRAM
KM736V689 64Kx36-Bit Synchronous Pipelined Burst SRAM
KM736V689A 64Kx36-Bit Synchronous Pipelined Burst SRAM

KM736V790 Distributor

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