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KM736V795 Datasheet

Manufacturer: Samsung Semiconductor
KM736V795 datasheet preview

Datasheet Details

Part number KM736V795
Datasheet KM736V795_SamsungSemiconductor.pdf
File Size 321.68 KB
Manufacturer Samsung Semiconductor
Description 128Kx36 Synchronous SRAM
KM736V795 page 2 KM736V795 page 3

KM736V795 Overview

The KM736V795 is a 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 128K words of 36bits and integrates address and control registers, a 2-bit burst address counter and added some new functions for high performance cache RAM applications; Write cycles are internally self-timed and synchronous.

KM736V795 Key Features

  • Synchronous Operation
  • 2 Stage Pipelined operation with 4 Burst
  • On-Chip Address Counter
  • Self-Timed Write Cycle
  • On-Chip Address and Control Registers
  • VDD= 3.3V+0.3V/-0.165V Power Supply
  • I/O Supply Voltage 2.5V+0.4V/-0.13V
  • 5V Tolerant Inputs Except I/O Pins
  • Byte Writable Function
  • Global Write Enable Controls a full bus-width write
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KM736V790 128Kx36 Synchronous SRAM
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KM736V747 128Kx36 & 256Kx18 Flow-Through NtRAM
KM736V749 128Kx36 & 256Kx18 Pipelined NtRAM
KM736V787 128Kx36 Synchronous SRAM
KM736V789 128Kx36 Synchronous SRAM
KM736V687 64Kx36-Bit Synchronous Burst SRAM
KM736V687A 64Kx36-Bit Synchronous Burst SRAM
KM736V689 64Kx36-Bit Synchronous Pipelined Burst SRAM
KM736V689A 64Kx36-Bit Synchronous Pipelined Burst SRAM

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