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KM736V799 Datasheet

Manufacturer: Samsung Semiconductor
KM736V799 datasheet preview

Datasheet Details

Part number KM736V799
Datasheet KM736V799_SamsungSemiconductor.pdf
File Size 297.84 KB
Manufacturer Samsung Semiconductor
Description 128Kx36 Synchronous SRAM
KM736V799 page 2 KM736V799 page 3

KM736V799 Overview

KM736V799 Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev. Change tOE from 3.2ns to 3.1ns at bin -50. Change setup from 1.5ns to 1.4ns at bin -50.

KM736V799 Key Features

  • Synchronous Operation
  • 2 Stage Pipelined operation with 4 Burst
  • On-Chip Address Counter
  • Self-Timed Write Cycle
  • On-Chip Address and Control Registers
  • VDD= 3.3V+0.165V/-0.165V Power Supply
  • 5V Tolerant Inputs Except I/O Pins
  • Byte Writable Function
  • Global Write Enable Controls a full bus-width write
  • Power Down State via ZZ Signal
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KM736V787 128Kx36 Synchronous SRAM
KM736V789 128Kx36 Synchronous SRAM
KM736V687 64Kx36-Bit Synchronous Burst SRAM
KM736V687A 64Kx36-Bit Synchronous Burst SRAM
KM736V689 64Kx36-Bit Synchronous Pipelined Burst SRAM
KM736V689A 64Kx36-Bit Synchronous Pipelined Burst SRAM

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