KM736V799
FEATURES
- Synchronous Operation.
- 2 Stage Pipelined operation with 4 Burst.
- On-Chip Address Counter.
- Self-Timed Write Cycle.
- On-Chip Address and Control Registers.
- VDD= 3.3V+0.165V/-0.165V Power Supply.
- VDDQ Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
- 5V Tolerant Inputs Except I/O Pins.
- Byte Writable Function.
- Global Write Enable Controls a full bus-width write.
- Power Down State via ZZ Signal.
- LBO Pin allows a choice of either a interleaved burst or a linear burst.
- Three Chip Enables for simple depth expansion with No Data Contention ; 2cycle Enable, 1cycle Disable.
- Asynchronous Output Enable Control.
- ADSP, ADSC, ADV Burst Control Pins.
- TTL-Level Three-State Output.
- 100-TQFP-1420A Package .
GENERAL DESCRIPTION
The KM736V799 is a 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 128K words of 36bits and...
