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KMM5361205C2W - 1MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo

Datasheet Summary

Description

The Samsung KMM5361205C2W is a 1Mx36bits Dynamic RAM high density memory module.

The Samsung KMM5361205C2W consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ package and one CMOS 1Mx4 bit Quad CAS with EDO DRAM in 24-pin SOJ package mounted on a 72-pin glassepoxy substrate.

Features

  • Part Identification - KMM5361205C2W(1024 cycles/16ms Ref, SOJ, Solder) - KMM5361205C2WG(1024 cycles/16ms Ref, SOJ, Gold).
  • Fast Page Mode with Extended Data Out.
  • CAS-before-RAS refresh capability.
  • RAS-only and hidden refresh capability.
  • TTL compatible inputs and outputs.
  • Single +5V ±10% power supply.
  • JEDEC standard PDPin & pinout.
  • PCB : Height(750mil), single sided component.

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Datasheet Details

Part number KMM5361205C2W
Manufacturer Samsung Semiconductor
File Size 278.50 KB
Description 1MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo
Datasheet download datasheet KMM5361205C2W Datasheet
Additional preview pages of the KMM5361205C2W datasheet.

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Full PDF Text Transcription

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DRAM MODULE KMM5361205C2W/C2WG 1Mx36 DRAM SIMM (1MX16 Base) Revision 0.0 November 1997 -1- Rev. 0.0 (Nov. 1997) DRAM MODULE Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. KMM5361205C2W/C2WG • Changed Module Part No. from KMM5361205CW/CWG to KMM5361205C2W/C2WG caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5361205C2W/C2WG KMM5361205C2W/C2WG Fast Page Mode with Extended Data Out 1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh, GENERAL DESCRIPTION The Samsung KMM5361205C2W is a 1Mx36bits Dynamic RAM high density memory module.
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