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KMM5361205C2W - 1MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo

General Description

The Samsung KMM5361205C2W is a 1Mx36bits Dynamic RAM high density memory module.

The Samsung KMM5361205C2W consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ package and one CMOS 1Mx4 bit Quad CAS with EDO DRAM in 24-pin SOJ package mounted on a 72-pin glassepoxy substrate.

Key Features

  • Part Identification - KMM5361205C2W(1024 cycles/16ms Ref, SOJ, Solder) - KMM5361205C2WG(1024 cycles/16ms Ref, SOJ, Gold).
  • Fast Page Mode with Extended Data Out.
  • CAS-before-RAS refresh capability.
  • RAS-only and hidden refresh capability.
  • TTL compatible inputs and outputs.
  • Single +5V ±10% power supply.
  • JEDEC standard PDPin & pinout.
  • PCB : Height(750mil), single sided component.

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Other Datasheets by Samsung Semiconductor

Part Number Description
KMM5361203C2W 1MBx36 DRAM Simm Using 1MBx16 And 1MBx4 Quad Cas
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DRAM MODULE KMM5361205C2W/C2WG 1Mx36 DRAM SIMM (1MX16 Base) Revision 0.0 November 1997 -1- Rev. 0.0 (Nov. 1997) DRAM MODULE Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. KMM5361205C2W/C2WG • Changed Module Part No. from KMM5361205CW/CWG to KMM5361205C2W/C2WG caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5361205C2W/C2WG KMM5361205C2W/C2WG Fast Page Mode with Extended Data Out 1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh, GENERAL DESCRIPTION The Samsung KMM5361205C2W is a 1Mx36bits Dynamic RAM high density memory module.