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KMM5361205C2W Datasheet

Manufacturer: Samsung Semiconductor
KMM5361205C2W datasheet preview

Datasheet Details

Part number KMM5361205C2W
Datasheet KMM5361205C2W_SamsungSemiconductor.pdf
File Size 278.50 KB
Manufacturer Samsung Semiconductor
Description 1MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo
KMM5361205C2W page 2 KMM5361205C2W page 3

KMM5361205C2W Overview

The Samsung KMM5361205C2W is a 1Mx36bits Dynamic RAM high density memory module. The Samsung KMM5361205C2W consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ package and one CMOS 1Mx4 bit Quad CAS with EDO DRAM in 24-pin SOJ package mounted on a 72-pin glassepoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.

KMM5361205C2W Key Features

  • Part Identification
  • KMM5361205C2W(1024 cycles/16ms Ref, SOJ, Solder)
  • KMM5361205C2WG(1024 cycles/16ms Ref, SOJ, Gold)
  • Fast Page Mode with Extended Data Out
  • CAS-before-RAS refresh capability
  • RAS-only and hidden refresh capability
  • TTL patible inputs and outputs
  • Single +5V ±10% power supply
  • JEDEC standard PDPin & pinout
  • PCB : Height(750mil), single sided ponent
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Part Number Description
KMM5361203C2W 1MBx36 DRAM Simm Using 1MBx16 And 1MBx4 Quad Cas
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KMM53632000CK 32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1
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KMM5361205C2W Distributor

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