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KMM53616004BK - DRAM MODULE

General Description

The Samsung KMM53616004B is a 16Mx36bits Dynamic RAM high density memory module.

The Samsung KMM53616004B consists of eight CMOS 16Mx4bits DRAMs and four CMOS 16Mx1bit DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate.

Key Features

  • Part Identification - KMM53616004BK(4K cycles/64ms Ref, SOJ, Solder) - KMM53616004BKG(4K cycles/64ms Ref, SOJ, Gold).
  • Hyper Page Mode Operation.
  • CAS-before-RAS & Hidden Refresh capability.
  • RAS-only refresh capability.
  • TTL compatible inputs and outputs.
  • Single +5V±10% power supply.
  • JEDEC standard PDpin & pinout.
  • PCB : Height(1250mil), double sided component.

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Other Datasheets by Samsung Semiconductor

Part Number Description
KMM53616004CK DRAM MODULE
KMM53616000BK 16MB X 36 DRAM Simm Using 16MB X 4 & 16MBx1
KMM53616000CK DRAM MODULE
KMM5361203C2W 1MBx36 DRAM Simm Using 1MBx16 And 1MBx4 Quad Cas
KMM5361205C2W 1MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DRAM MODULE KMM53616004BK/BKG KMM53616004BK/BKG EDO Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM53616004B is a 16Mx36bits Dynamic RAM high density memory module. The Samsung KMM53616004B consists of eight CMOS 16Mx4bits DRAMs and four CMOS 16Mx1bit DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM53616004B is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.